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this is information on a product in full production. october 2013 docid024361 rev 4 1/22 22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df trench gate field-stop igbt, v series 600 v, 30 a very high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? tail-less switching off ? v ce(sat) = 1.85 v (typ.) @ i c = 30 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? very fast soft recovery antiparallel diode applications ? photovoltaic inverters ? uninterruptible power supply ? welding ? power factor correction ? very high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field stop structure. the device is part of the v series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. furthermore, a positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. c (2, tab) g (1) e (3) to-247 to-3p 1 2 3 1 2 3 1 3 ta b d2pak 1 2 3 ta b to-220 tab table 1. device summary order codes marking package packaging STGB30V60DF gb30v60df d2pak tape and reel stgp30v60df gp30v60df to-220 tube stgw30v60df gw30v60df to-247 tube stgwt30v60df gwt30v60df to-3p tube www.st.com
electrical ratings STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 2/22 docid024361 rev 4 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 120 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 60 a i f continuous forward current at t c = 100 c 30 a i fp (1) pulsed forward current 120 a p tot total dissipation at t c = 25 c 258 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.58 c/w r thjc thermal resistance junction-case diode 2.08 c/w r thja thermal resistance junction-ambient 50 c/w
docid024361 rev 4 3/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df electrical characteristics 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a 1.85 2.3 v v ge = 15 v, i c = 30 a t j = 125 c 2.15 v ge = 15 v, i c = 30 a t j = 175 c 2.35 v f forward on-voltage i f = 30 a 2 2.6 v i f = 30 a, t j = 125 c 1.7 v i f = 30 a, t j = 175 c 1.6 v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3750- pf c oes output capacitance - 120 - pf c res reverse transfer capacitance -77-pf q g total gate charge v cc = 480 v, i c = 30 a, v ge = 15 v, see figure 29 -163-nc q ge gate-emitter charge - 28 - nc q gc gate-collector charge - 72 - nc
electrical characteristics STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 4/22 docid024361 rev 4 table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, see figure 28 -45-ns t r current rise time - 16 - ns (di/dt) on turn-on current slope - 1500 - a/ s t d ( off ) turn-off delay time - 189 - ns t f current fall time - 19 - ns e on (1) 1. energy losses include reverse recovery of the diode. turn-on switching losses - 383 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 233 - j e ts total switching losses - 616 - j t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 28 -42-ns t r current rise time - 17 - ns (di/dt) on turn-on current slope - 1337 - a/ s t d ( off ) turn-off delay time - 193 - ns t f current fall time - 32 - ns e on (1) turn-on switching losses - 794 - j e off (2) turn-off switching losses - 378 - j e ts total switching losses - 1172 - j table 7. diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 30 a, v r = 400 v, di/dt=1000 a/ s , v ge = 15 v, (see figure 28 ) -53-ns q rr reverse recovery charge - 384 - nc i rrm reverse recovery current - 14.5 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 788 - a/ s e rr reverse recovery energy - 104 - j t rr reverse recovery time i f = 30 a, v r = 400 v, di/dt=1000 a/ s , v ge = 15 v, t j = 175 c, (see figure 28 ) - 104 - ns q rr reverse recovery charge - 1352 - nc i rrm reverse recovery current - 26 - a di rr/ /dt peak rate of fall of reverse recovery current during t b - 310 - a/ s e rr reverse recovery energy - 407 - j
docid024361 rev 4 5/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df electrical characteristics 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j =25c) figure 5. output characteristics (t j =175c) figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current p tot 150 100 50 0 0 50 100 (w) 25 75 125 200 150 175 t c (c) 250 am17409v1 i c 30 20 10 0 0 50 t c (c) 100 (a) 25 75 125 40 50 150 175 60 am17410v1 i c 80 60 20 0 0 1 3 (a) 2 4 100 v ce (v) 40 9v 11v 13v v ge =15v 120 am17411v1 i c 80 60 20 0 0 1 3 (a) 2 4 100 120 v ce (v) 40 9v 11v 13v 7v v ge =15v am17412v1 v ce(sat) 2.0 1.8 1.4 1.2 -50 0 100 (v) 50 150 2.2 2.4 t c (c) 1.6 2.6 2.8 v ge =15v i c =60a i c =30a i c =15a 3.0 3.2 am17413v1 1.6 1.4 1.0 0.8 0 10 30 20 40 1.8 2.0 i c (a) 1.2 2.2 2.4 v ge =15v t j =175c t j =25c t j =-40c 60 50 v ce(sat) (v) 2.6 2.8 3.0 3.2 am17414v1
electrical characteristics STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 6/22 docid024361 rev 4 figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area figure 10. transfer characteristics figure 11. diode v f vs. forward current figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature i c 40 30 10 0 1 (a) 10 50 60 f(khz) 20 70 80 t c =80c t c =100c rectangular current shape, (duty cycle=0.5, vcc= 400v rg=10, vge=0/15v , tj=175 c) am17415v1 i c 100 10 0.1 0.01 1 (a) 10 v ce (v) 1 10s 100s 1ms 100 single pulse, tc=25c tj<175c, v ge =15v am17416v1 i c 80 60 20 0 7 (a) 8 v ge (v) 40 tj=175c tj=25c tj=-40c 9 100 10 11 am17417v1 v f 1.9 1.1 10 (a) 20 i f (a) 1.5 tj=175c tj=25c tj=-40c 30 2.3 40 50 60 am17418v1 v ge(th) 0.8 0.6 -50 (norm) t c (c) 0.7 0 0.9 1.0 50 100 150 v ce =v ge i c =1ma am17419v1 v (br)ces 1.1 0.9 -50 (norm) t c (c) 1.0 0 50 100 150 i c =2ma am17420v1
docid024361 rev 4 7/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df electrical characteristics figure 14. capacitance variations figure 15. gate charge vs. gate-emitter voltage figure 16. switching losses vs. collector current figure 17. switching losses vs. gate resistance figure 18. switching losses vs. junction temperature figure 19. switching losses vs. collector emitter voltage c(pf) 10 0.1 v ce (v) 1000 1 10 100 10000 cies coes cres am17421v1 v ge (v) 0 0 q g (nc) 50 100 2 150 175 4 6 8 10 12 14 16 25 125 75 am17422v1 e(j) 0 0 i c (a) 400 10 20 200 600 30 40 v cc =400v, v ge =15v rg=10, tj=175c 800 1000 1200 1400 eon eoff 50 60 1600 1800 2000 am17423v1 e(j) 0 r g () 400 10 20 200 600 30 40 v cc =400v, v ge =15v i c =30a, tj=175c 800 1000 1200 eon eoff am17424v1 e(j) 25 t j (c) 200 50 75 100 300 100 125 v cc =400v, v ge =15v i c =30a, rg=10 400 500 600 eon eoff 150 0 700 800 am17425v1 e(j) 150 v ce (v) 500 200 250 100 900 300 350 v ge =15v, tj=175c i c =30a, rg=10 eon eoff 300 700 1100 400 450 am17426v1
electrical characteristics STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 8/22 docid024361 rev 4 figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance figure 22. reverse recovery current vs. diode current slope figure 23. reverse recovery time vs. diode current slope figure 24. reverse recovery charge vs. diode current slope figure 25. reverse recovery energy vs. diode current slope t(ns) 0 i c (a) 10 20 10 30 40 v cc =400v, tj=175c, v ge =15v rg=10 t doff t don 100 t r t f 50 60 am17427v1 t(ns) 0 r g () 10 20 10 30 40 v cc =400v, tj=175c, v ge =15v i c =30a t doff t don 100 t r t f 1000 am17428v1 i rm (a) 0 di/dt (a/s) 500 10 1000 v r =400v i f =30a tj=175c 20 30 40 0 1500 tj=25c am17429v1 t rr (s) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =30a tj=175c 50 100 150 200 0 2500 tj=25c am17430v1 q rr (nc) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =30a tj=175c 500 1000 1500 2000 0 2500 tj=25c am17431v1 e rr (j) 0 di/dt (a/s) 500 1000 1500 2000 v r =400v i f =30a tj=175c 200 400 600 800 1000 0 2500 tj=25c am17432v1
docid024361 rev 4 9/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df electrical characteristics figure 26. thermal data for igbt figure 27. thermal data for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
test circuits STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 10/22 docid024361 rev 4 3 test circuits figure 28. test circuit for inductive load switching figure 29. gate charge test circuit figure 30. switching waveform figure 31. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
docid024361 rev 4 11/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 12/22 docid024361 rev 4 figure 32. d2pak (to-263) drawing figure 33. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024361 rev 4 13/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df package mechanical data table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 14/22 docid024361 rev 4 figure 34. to-220 type a drawing 0015988_typea_rev_s
docid024361 rev 4 15/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df package mechanical data table 10. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 16/22 docid024361 rev 4 figure 35. to-247 drawing 0075325_g
docid024361 rev 4 17/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df package mechanical data table 11. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
package mechanical data STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 18/22 docid024361 rev 4 figure 36. to-3p drawing 8045950_a
docid024361 rev 4 19/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df packaging mechanical data 5 packaging mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df 20/22 docid024361 rev 4 figure 37. tape figure 38. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024361 rev 4 21/22 STGB30V60DF, stgp30v60df, stgw30v60df, stgwt30v60df revision history 6 revision history table 13. document revision history date revision changes 14-mar-2013 1 initial release. 03-may-2013 2 added: section 2.1: electrical characteristics (curves) 04-jun-2013 3 added minimum and maximum values for v ge(th) in table 4: static characteristics . 08-oct-2013 4 updated title, features and description in cover page.
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